The 10th International Symposium on SIMS and Related Techniques Based on Ion-Solid Interactions at Seikei University (SISS-10)
Scope
SISS-10 will cover SIMS and related techniques based on ion-solid interactions: fundamentals, instrumentation, and application in various fields, such as semiconductors, industrial materials, biological, medical, and environmental sciences. This symposium will be held as a post-conference of SIMS-XVI. In this time, we will have mainly three sessions: Atom Probe, D-SIMS, and TOF-SIMS.
Date
July 17-18, 2008 10:00-17:00
Place
Meeting Room on the 4th floor, University Building #14, Seikei University
(Social meeting: July 17, 2008 17:20-19:00, Hall on the 12th floor, University Building #10)
Registration Fee
2,000 Yen (including social meeting fee)
Abstract Submission
All invited and contributed presenters are expected to write abstract paper. Digital file (MS-Word file) should be sent by e-mail to the Program coordinator (Mitsuhiro Tomita), no later than June 13th, 2008. The abstract should be accompanied by a cover letter stating the title, name, address, e-mail address. The format requires A4 page (No page limitation).
Program（Download）
Committee
Organizing Committee
Chair: Masahiro Kudo（Seikei University)
Atsushi Murase(Toyota Central R&D Labs.)
Program Coordinators
Mitsuhiro Tomita (Toshiba)
Masashi Nojima (Tokyo University of Science)
Manabu Komatsu (Canon)
Technical Advisor
Teiichiro Kono (Asahi Kasei)
Nobuhiko Kato (Seikei University)
Finance & Editorial Coordinators
Akio Takano (NTT-AT)
Mineharu Suzuki (ULVAC-PHI)